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https://hdl.handle.net/2440/100649
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Type: | Journal article |
Title: | Read operation performance of large selectorless cross-point array with self-rectifying memristive device |
Author: | Gao, Y. Kavehei, O. Al-Sarawi, S.F. Ranasinghe, D.C. Abbott, D. |
Citation: | Integration, 2016; 54:56-64 |
Publisher: | Elsevier |
Issue Date: | 2016 |
ISSN: | 0167-9260 1872-7522 |
Abstract: | Memristive device based passive crossbar arrays hold a great promise for high-density and non-volatile memories. A significant challenge of ultra-high density integration of these crossbars is unwanted sneak-path currents. The most common way of addressing this issue today is an integrated or external selecting device to block unwanted current paths. In this paper, we use a memristive device with intrinsic rectifying behavior to suppress sneak-path currents in the crossbar. We systematically evaluate the read operation performance of large-scale crossbar arrays with regard to read margin and power consumption for different crossbar sizes, nanowire interconnect resistances, ON and OFF resistances, rectification ratios under different read-schemes. Outcomes of this study allow improved understanding of the trade-off between read margin, power consumption and read-schemes. Most importantly, this study provides a guideline for circuit designers to improve the performance of oxide-based resistive memory (RRAM) based cross-point arrays. Overall, self-rectifying behavior of the memristive device efficiently improves the read operation performance of large-scale selectorless cross-point arrays. |
DOI: | 10.1016/j.vlsi.2016.02.002 |
Grant ID: | http://purl.org/au-research/grants/arc/DP140103448 |
Published version: | http://dx.doi.org/10.1016/j.vlsi.2016.02.002 |
Appears in Collections: | Aurora harvest 3 Electrical and Electronic Engineering publications |
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