Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/104121
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Type: Conference item
Title: A silicon single-electron pump with tunable electrostatic confinement
Author: Rossi, A.
Tanttu, T.
Tan, K.
Zhao, R.
Chan, K.
Iisakka, I.
Tettamanzi, G.
Rogge, S.
Dzurak, A.
Mottonen, M.
Citation: Proceedings 2014 Silicon Nanoelectronics Workshop, SNW 2014, 2015
Publisher: IEEE
Issue Date: 2015
Series/Report no.: IEEE Silicon Nanoelectronics Workshop
ISBN: 9781479956784
ISSN: 2161-4636
Conference Name: 2014 Silicon Nanoelectronics Workshop (SNW 2014) (08 Jun 2014 - 09 Jun 2014 : Honolulu, HI)
Statement of
Responsibility: 
A. Rossi, T. Tanttu, K.Y. Tan, R. Zhao, K.W. Chan, I. Iisakka, G.C. Tettamanzi, S. Rogge, A.S. Dzurak and M. Möttönen
Abstract: Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).
Rights: ©2014 IEEE
RMID: 0030063560
DOI: 10.1109/SNW.2014.7348563
Appears in Collections:Physics publications

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