Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/104124
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Type: Conference item
Title: Modeling the pumping of electrons through a single dopant atom in a Si MOSFET
Author: Van Der Heijden, J.
Tettamanzi, G.
Rogge, S.
Citation: Proceedings 2014 Silicon Nanoelectronics Workshop, SNW 2014, 2015 / pp.89-90
Publisher: IEEE
Issue Date: 2015
Series/Report no.: IEEE Silicon Nanoelectronics Workshop
ISBN: 9781479956784
ISSN: 2161-4636
Conference Name: 2014 Silicon Nanoelectronics Workshop (SNW 2014) (08 Jun 2014 - 09 Jun 2014 : Honolulu, HI)
Statement of
Responsibility: 
Joost van der Heijden, Giuseppe C. Tettamanzi, and Sven Rogge
Abstract: Modeling results for the study of a new kind of charge pump geometry, the single dopant atom charge pump (SDA-CP), are presented. The behavior of our SDA-CP is described in terms of frequency, position of the dopant in the channel, binding energy and power applied to the RF gate. These results are particular important as they confirm that the behavior of the SDA-CP, as recently experimentally observed, is quite different from the behavior of a conventional quantum dot (QD) CP. The latter is more easily affected by error mechanisms, while the Coulomb potential of the single dopant atom offers protection from these non-adiabatic errors.
Rights: ©2014 IEEE
RMID: 0030063557
DOI: 10.1109/SNW.2014.7348561
Grant ID: http://purl.org/au-research/grants/arc/DE120100702
http://purl.org/au-research/grants/arc/FT100100589
Appears in Collections:Physics publications

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