Modeling the pumping of electrons through a single dopant atom in a Si MOSFET

Abstract

Modeling results for the study of a new kind of charge pump geometry, the single dopant atom charge pump (SDA-CP), are presented. The behavior of our SDA-CP is described in terms of frequency, position of the dopant in the channel, binding energy and power applied to the RF gate. These results are particular important as they confirm that the behavior of the SDA-CP, as recently experimentally observed, is quite different from the behavior of a conventional quantum dot (QD) CP. The latter is more easily affected by error mechanisms, while the Coulomb potential of the single dopant atom offers protection from these non-adiabatic errors.