Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/104342
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Type: Journal article
Title: An accurate single-electron pump based on a highly tunable silicon quantum dot
Author: Rossi, A.
Tanttu, T.
Tan, K.
Iisakka, I.
Zhao, R.
Chan, K.
Tettamanzi, G.
Rogge, S.
Dzurak, A.
Möttönen, M.
Citation: Nano Letters, 2014; 14(6):3405-3411
Publisher: American Chemical Society
Issue Date: 2014
ISSN: 1530-6984
1530-6992
Statement of
Responsibility: 
Alessandro Rossi, Tuomo Tanttu, Kuan Yen Tan, Ilkka Iisakka, Ruichen Zhao, Kok Wai Chan, Giuseppe C. Tettamanzi, Sven Rogge, Andrew S. Dzurak, and Mikko Möttönen
Abstract: Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of nonadiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.
Keywords: Nanoelectronics; silicon; quantum dot; single-electron pump; electrical current standard; metrology
Rights: © 2014 American Chemical Society
RMID: 0030063564
DOI: 10.1021/nl500927q
Grant ID: http://purl.org/au-research/grants/arc/DP120104710
http://purl.org/au-research/grants/arc/DE120100702
http://purl.org/au-research/grants/arc/FT100100589
Appears in Collections:Physics publications

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