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Type: Journal article
Title: Probing the spin states of a single acceptor atom
Author: Van Der Heijden, J.
Salfi, J.
Mol, J.
Verduijn, J.
Tettamanzi, G.
Hamilton, A.
Collaert, N.
Rogge, S.
Citation: Nano Letters, 2014; 14(3):1492-1496
Publisher: American Chemical Society
Issue Date: 2014
ISSN: 1530-6984
Statement of
Joost van der Heijden, Joe Salfi, Jan A. Mol, Jan Verduijn, Giuseppe C. Tettamanzi, Alex R. Hamilton, Nadine Collaert, and Sven Rogge
Abstract: We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a function of magnetic field into four states, which is unique for a single hole bound to an acceptor in a bulk semiconductor. The two lowest spin states are heavy (|m(j)| = 3/2) and light (|m(j)| = 1/2) hole-like, a two-level system that can be electrically driven and is characterized by a magnetic field dependent and long relaxation time, which are properties of interest for qubits. Although the bulklike spin splitting of a boron atom is preserved in our nanotransistor, the measured Landé g-factors, |g(hh)| = 0.81 ± 0.06 and |g(lh)| = 0.85 ± 0.21 for heavy and light holes respectively, are lower than the bulk value.
Keywords: Single acceptor; silicon MOSFET; single atom transistor; boron atom; magneto-transport spectroscopy; hole spin states
Rights: © 2014 American Chemical Society
RMID: 0030063566
DOI: 10.1021/nl4047015
Grant ID:
Appears in Collections:Physics publications

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