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Type: Journal article
Title: Probing the quantum states of a single atom transistor at microwave frequencies
Author: Tettamanzi, G.
Hile, S.
House, M.
Fuechsle, M.
Rogge, S.
Simmons, M.
Citation: ACS Nano, 2017; 11(3):2444-2451
Publisher: American Chemical Society
Issue Date: 2017
ISSN: 1936-0851
Statement of
Giuseppe Carlo Tettamanzi, Samuel James Hile, Matthew Gregory House, Martin Fuechsle, Sven Rogge, and Michelle Y. Simmons
Abstract: The ability to apply gigahertz frequencies to control the quantum state of a single P atom is an essential requirement for the fast gate pulsing needed for qubit control in donor-based silicon quantum computation. Here, we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to ≈13 GHz to heavily phosphorus-doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one-dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy ≈9 meV, consistent with the first excited state of a single P donor in silicon. The relaxation rate of this first excited state to the ground state is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under radio frequency excitations.
Keywords: Silicon; single atom transistor; phosphorus; monolayer-doped electrodes; pulse spectroscopy; relaxation rates
Rights: Copyright © 2016 American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes
RMID: 0030063609
DOI: 10.1021/acsnano.6b06362
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Appears in Collections:IPAS publications

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