Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/104508
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Type: Journal article
Title: A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures
Author: Purches, W.
Rossi, A.
Zhao, R.
Kafanov, S.
Duty, T.
Dzurak, A.
Rogge, S.
Tettamanzi, G.
Citation: Applied Physics Letters, 2015; 107(6):063503-1-063503-5
Publisher: American Institute of Physics
Issue Date: 2015
ISSN: 0003-6951
1077-3118
Statement of
Responsibility: 
W.E. Purches, A. Rossi, R. Zhao, S. Kafanov, T.L. Duty, A.S. Dzurak, S. Rogge and G.C. Tettamanzi
Abstract: Abstract not available
Rights: © 2015 AIP Publishing LLC
RMID: 0030063561
DOI: 10.1063/1.4928589
Grant ID: http://purl.org/au-research/grants/arc/FT100100025
http://purl.org/au-research/grants/arc/FT100100589
http://purl.org/au-research/grants/arc/DE120100702
Appears in Collections:Physics publications

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