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Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/104508
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dc.contributor.authorPurches, W.-
dc.contributor.authorRossi, A.-
dc.contributor.authorZhao, R.-
dc.contributor.authorKafanov, S.-
dc.contributor.authorDuty, T.-
dc.contributor.authorDzurak, A.-
dc.contributor.authorRogge, S.-
dc.contributor.authorTettamanzi, G.-
dc.date.issued2015-
dc.identifier.citationApplied Physics Letters, 2015; 107(6):063503-1-063503-5-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttp://hdl.handle.net/2440/104508-
dc.description.abstractAbstract not available-
dc.description.statementofresponsibilityW.E. Purches, A. Rossi, R. Zhao, S. Kafanov, T.L. Duty, A.S. Dzurak, S. Rogge and G.C. Tettamanzi-
dc.language.isoen-
dc.publisherAmerican Institute of Physics-
dc.rights© 2015 AIP Publishing LLC-
dc.source.urihttp://dx.doi.org/10.1063/1.4928589-
dc.titleA planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures-
dc.typeJournal article-
dc.identifier.doi10.1063/1.4928589-
dc.relation.granthttp://purl.org/au-research/grants/arc/FT100100025-
dc.relation.granthttp://purl.org/au-research/grants/arc/FT100100589-
dc.relation.granthttp://purl.org/au-research/grants/arc/DE120100702-
pubs.publication-statusPublished-
dc.identifier.orcidTettamanzi, G. [0000-0002-3209-0632]-
Appears in Collections:Aurora harvest 8
Physics publications

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