Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/107230
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Type: Journal article
Title: Few electron limit of n-type metal oxide semiconductor single electron transistors
Author: Prati, E.
De Michielis, M.
Belli, M.
Cocco, S.
Fanciulli, M.
Kotekar-Patil, D.
Ruoff, M.
Kern, D.
Wharam, D.
Verduijn, J.
Tettamanzi, G.
Rogge, S.
Roche, B.
Wacquez, R.
Jehl, X.
Vinet, M.
Sanquer, M.
Citation: Nanotechnology, 2012; 23(21):215204-1-215204-5
Publisher: IOP Publishing
Issue Date: 2012
ISSN: 0957-4484
1361-6528
Statement of
Responsibility: 
Enrico Prati, Marco De Michielis, Matteo Belli, Simone Cocco, Marco Fanciulli, Dharmraj Kotekar-Patil, Matthias Ruoff, Dieter P Kern, David A Wharam, Jan Verduijn, Giuseppe C Tettamanzi, Sven Rogge, Benoit Roche, Romain Wacquez, Xavier Jehl, Maud Vinet and Marc Sanquer
Abstract: We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.
Keywords: Nanotechnology
Rights: © 2012 IOP Publishing Ltd Printed in the UK & the USA
RMID: 0030063572
DOI: 10.1088/0957-4484/23/21/215204
Grant ID: http://purl.org/au-research/grants/arc/FT100100589
http://purl.org/au-research/grants/arc/DE120100702
Appears in Collections:Electrical and Electronic Engineering publications

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