Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/16586
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dc.contributor.authorWithayachumnankul, W.en
dc.contributor.authorFerguson, B.en
dc.contributor.authorRainsford, T.en
dc.contributor.authorMickan, S.en
dc.contributor.authorAbbott, D.en
dc.date.issued2005en
dc.identifier.citationElectronics Letters, 2005; 41(14):800-801en
dc.identifier.issn0013-5194en
dc.identifier.urihttp://hdl.handle.net/2440/16586-
dc.description© 2005 Institution of Engineering and Technologyen
dc.description.abstractA simple and precise method based on fixed-point iteration is used to estimate dielectric parameters using terahertz time-domain spectroscopy (THz-TDS). The method converges and gives correct parameters when the sample thickness is greater than 200 mm at a frequency of 0.1 THz or 20 mm at a frequency of 1.0 THz. The technique in validated using measured terahertz data, obtained by probing a sample of high-resistivity silicon.en
dc.description.statementofresponsibilityW. Withayachumnankul, B. Ferguson, T. Rainsford, S.P. Mickan, and D. Abbotten
dc.language.isoenen
dc.publisherIEE-Inst Elec Engen
dc.titleSimple material parameter estimation via terahertz time-domain spectroscopyen
dc.typeJournal articleen
dc.identifier.rmid0020050724en
dc.identifier.doi10.1049/el:20051467en
dc.identifier.pubid54841-
pubs.library.collectionElectrical and Electronic Engineering publicationsen
pubs.verification-statusVerifieden
pubs.publication-statusPublisheden
dc.identifier.orcidAbbott, D. [0000-0002-0945-2674]en
Appears in Collections:Electrical and Electronic Engineering publications

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