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|Title:||Optical MTF and quantum efficiency analysis in a finite slab|
|Citation:||Microelectronics Journal, 2002; 33(1-2):161-170|
|Publisher:||Elsevier Advanced Technology|
|Abstract:||The formula for quantum efficiency in a semiconducting material was first derived by Seib in 1974 for a semi-infinite slab of semiconducting material. Seib's first-order analysis considered the effect of absorption coefficient, minority carrier diffusion length and depletion width. However, for modern devices on epitaxial material, smart sensors, quantum well devices, etc., the semi-infinite slab approximation breaks down. Here, we present the derivation for a finite slab that considers the thickness of the layer as a fourth parameter. We present a case study analyzing quantum efficiency, and hence MTF, in epitaxial silicon versus bulk gallium arsenide.|
|Keywords:||Internal quantum efficiency; Modulation transfer function; Optical image sensors; Optical smart sensors; Photodetection|
|Appears in Collections:||Electrical and Electronic Engineering publications|
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