Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/2444
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Type: Journal article
Title: Optical MTF and quantum efficiency analysis in a finite slab
Author: Abbott, D.
Citation: Microelectronics Journal, 2002; 33(1-2):161-170
Publisher: Elsevier Advanced Technology
Issue Date: 2002
ISSN: 0026-2692
Abstract: The formula for quantum efficiency in a semiconducting material was first derived by Seib in 1974 for a semi-infinite slab of semiconducting material. Seib's first-order analysis considered the effect of absorption coefficient, minority carrier diffusion length and depletion width. However, for modern devices on epitaxial material, smart sensors, quantum well devices, etc., the semi-infinite slab approximation breaks down. Here, we present the derivation for a finite slab that considers the thickness of the layer as a fourth parameter. We present a case study analyzing quantum efficiency, and hence MTF, in epitaxial silicon versus bulk gallium arsenide.
Keywords: Internal quantum efficiency; Modulation transfer function; Optical image sensors; Optical smart sensors; Photodetection
RMID: 0020020673
DOI: 10.1016/S0026-2692(01)00115-X
Description (link): http://www.elsevier.com/wps/find/journaldescription.cws_home/405904/description#description
Appears in Collections:Electrical and Electronic Engineering publications

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