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|Title:||A design methodology for a very low noise figure common-source LNA|
|Citation:||Smart structures, devices, and systems II : 13-15 December 2004, Sydney, Australia / Said F. Al-Sarawi (ed.), pp. 31-43|
|Publisher Place:||Bellingham, Washington, USA|
|Series/Report no.:||Proceedings of SPIE--the International Society for Optical Engineering ; 5649.|
|Conference Name:||SPIE International Symposium on Smart Structures, Devices, and Systems II (2004 : Sydney, Australia)|
|Yingbo Zhu, Said F. Al-Sarawi, and Michael Liebelt|
|Abstract:||The design of common source (CS) Low Noise Amplifiers (LNA) for wireless receivers is presented. The design trade-offs between main criteria are discussed. An extra gate-to-source capacitor is added to the input transistor to reduce the transistor dimension while still satisfying the noise matching. The small MOSFET also improves the LNA linearity with comparatively small drain-source current. The extra gate-to-source capacitor is introduced by the bonding-pad parasitic capacitor; hence a negative effect parasitic capacitance is turned into a useful capacitor. The simulated Noise Figure (NF) of two single-ended LNAs using 0.18 µm CMOS process achieve 0.62 dB and 0.92 dB at 2.4 GHz and 5.25 GHz respectively while matching a 50 ohm impedance.|
|Description:||©2005 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.|
|Appears in Collections:||Environment Institute publications|
Electrical and Electronic Engineering publications
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