Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/55520
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Type: Journal article
Title: Enhancement of quantum well intermixing on InP/InGaAs/InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion
Author: François, A.
Aimez, V.
Beauvais, J.
Gendry, M.
Regreny, P.
Citation: Applied Physics Letters, 2006; 89(16):164107-1-164107-3
Publisher: Amer Inst Physics
Issue Date: 2006
ISSN: 0003-6951
1077-3118
Statement of
Responsibility: 
A. François, V. Aimez, J. Beauvais, M. Gendry and P. Regreny
Abstract: <jats:p>Quantum well intermixing was studied on InP∕InGaAs∕InGaAsP heterostructures under stress induced by a TiOx surface stressor. Results provide a comparison of thermal emission wavelength shift and effective emission wavelength shift for samples intermixed with and without applied stress. It is shown that TiOx decreases the measured thermal shift depending on the amplitude of the induced stress. It is also shown that the diffusion of point defects created during ion implantation prior to TiOx stressor deposition is significantly enhanced. This results in an increase of the effective wavelength shift by up to 300%.</jats:p>
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
DOI: 10.1063/1.2364058
Published version: http://dx.doi.org/10.1063/1.2364058
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Physics publications

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