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|dc.identifier.citation||Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces & Films, 2006; 24(3):797-801||en|
|dc.description.abstract||Measurements of stress induced by TiO<sub>x</sub> layers on single quantum well InP based heterostructure are presented. Strain characterization has been performed by photoluminescence (PL) and micro-Raman spectroscopy. We present a comparison of the stress induced by TiO<sub>x</sub> and SiO<sub>2</sub> layers which are commonly used as masking material for the quantum well intermixing process. Micro-Raman spectroscopy and PL revealed that TiO<sub>2</sub> is creating a stress field in the top layers of the heterostructure, with a dependence on temperature and stressor thickness. A hysteresis phenomenon of the Raman shift has also been observed after measurements at low temperature (below 300 K) which shows that the stress created by TiO<sub>x</sub> exceeds the elastic limit of InP. On the other hand, there is no evidence that SiO<sub>2</sub> is inducing stress. Rapid thermal annealing of samples covered with titanium oxide results in improvement of the thermal stability.||en|
|dc.description.statementofresponsibility||A. Francois, V. Aimez, J. Beauvais and D. Barba||en|
|dc.publisher||American Institute of Physics||en|
|dc.rights||© 2006 American Vacuum Society||en|
|dc.title||Measurements of TiOx stress induced on InP/InGaAs/InGaAsP quantum well heterostructures||en|
|dc.identifier.orcid||François, A. [0000-0003-0989-3813]||en|
|Appears in Collections:||Chemistry and Physics publications|
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