Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/57138
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dc.contributor.authorFrançois, A.en
dc.contributor.authorAimez, V.en
dc.contributor.authorBeauvais, J.en
dc.contributor.authorBarba, D.en
dc.date.issued2006en
dc.identifier.citationJournal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces & Films, 2006; 24(3):797-801en
dc.identifier.issn1553-1813en
dc.identifier.issn0734-2101en
dc.identifier.urihttp://hdl.handle.net/2440/57138-
dc.description.abstractMeasurements of stress induced by TiO<sub>x</sub> layers on single quantum well InP based heterostructure are presented. Strain characterization has been performed by photoluminescence (PL) and micro-Raman spectroscopy. We present a comparison of the stress induced by TiO<sub>x</sub> and SiO<sub>2</sub> layers which are commonly used as masking material for the quantum well intermixing process. Micro-Raman spectroscopy and PL revealed that TiO<sub>2</sub> is creating a stress field in the top layers of the heterostructure, with a dependence on temperature and stressor thickness. A hysteresis phenomenon of the Raman shift has also been observed after measurements at low temperature (below 300 K) which shows that the stress created by TiO<sub>x</sub> exceeds the elastic limit of InP. On the other hand, there is no evidence that SiO<sub>2</sub> is inducing stress. Rapid thermal annealing of samples covered with titanium oxide results in improvement of the thermal stability.en
dc.description.statementofresponsibilityA. Francois, V. Aimez, J. Beauvais and D. Barbaen
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rights© 2006 American Vacuum Societyen
dc.titleMeasurements of TiOx stress induced on InP/InGaAs/InGaAsP quantum well heterostructuresen
dc.typeJournal articleen
dc.identifier.doi10.1116/1.2172925en
pubs.publication-statusPublisheden
dc.identifier.orcidFrançois, A. [0000-0003-0989-3813]en
Appears in Collections:Chemistry and Physics publications

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