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Type: Journal article
Title: Electronic properties of silicon nanotubes with distinct bond lengths
Author: Bunder, J.
Hill, J.
Citation: Physical Review B: Condensed Matter and Materials Physics, 2009; 79(23):online-
Publisher: American Physical Soc
Issue Date: 2009
ISSN: 1098-0121
Statement of
J. E. Bunder and James M. Hill
Abstract: We analyze the band structure of a silicon nanotube with sp³ bonds and variable bond lengths. This nanotube has many similarities with a carbon nanotube including a band gap at half-filling and conducting behavior which is dependent on structure. We derive a simple formula which predicts when the nanotube is metallic. We discuss our results in the context of a nanotube subject to small applied strains as this provides a means of distorting bond lengths in a predictable way and may be tested experimentally. The effects of strain on nanotube conductance have important implications for sensor technology.
Rights: © 2009 The American Physical Society
DOI: 10.1103/PhysRevB.79.233401
Grant ID: ARC
Appears in Collections:Aurora harvest 5
Mathematical Sciences publications

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