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Type: Journal article
Title: Integrated Memristor-MOS (M²) sensor for basic pattern matching applications
Other Titles: Integrated Memristor-MOS (M(2)) sensor for basic pattern matching applications
Author: Kavehei, O.
Cho, K.R.
Lee, S.
Al-Sarawi, S.
Eshraghian, K.
Abbott, D.
Citation: Journal of Nanoscience and Nanotechnology, 2013; 13(5):3638-3640
Publisher: American Scientific Publishers
Issue Date: 2013
ISSN: 1533-4880
Statement of
Omid Kavehei, Kyoung-Rok Cho, Sang-Jin Lee, Said Al-Sarawi, Kamran Eshraghian, and Derek Abbott
Abstract: This paper introduces an integrated sensor circuit based on an analog Memristor-MOS (M2) pattern matching building block that calculates the similarity/dissimilarity between two analog values. A new approach for a pulse-width modulation pixel image sensor compatible with the memristive-MOS matching structure is introduced allowing direct comparison between incoming and stored images. The pulsed-width encoded information from the pixels is forwarded to a matching circuitry that provides an anti-Gaussian-like comparison between the states of memristors. The non-volatile and multi-state memory characteristics of memristor, together with the related ability to be programmed at any one of the intermediate states between logic '1' and logic '0' brings us closer to the implementation of bio-machines that can eventually emulate human-like sensory functions.
Keywords: Memristor
Pattern Matching
Non-Volatile Memory
Thin Films.
Rights: Copyright © 2013 American Scientific Publishers
DOI: 10.1166/jnn.2013.7295
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Electrical and Electronic Engineering publications

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