Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/85259
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Type: Journal article
Title: Photovoltaic gate biasing edge effect in GaAs MESFETs
Author: Abbott, D.
Cui, S.
Eshraghian, K.
McCabe, E.
Citation: Electronics Letters, 1991; 27(21):1900-1902
Publisher: IEEE
Issue Date: 1991
ISSN: 0013-5194
Statement of
Responsibility: 
D. Abbott, S. Cui, K. Eshraghian, E. McCabe
Abstract: A new effect in planar GaAs MESFETs, whereby a sharp increase in optical gain at the transistor edges occurs, is reported for the first time. This gain effect only appears when a large resistor is inserted in series with the gate, to produce the conditions for photovoltaic gate biasing. The mechanism for increased gain at the edges is suggested to be due to carrier photogeneration in the substrate that is subsequently collected by the gate. Application in the area of X-Y addressable transistor array imagers is proposed.
Keywords: Gallium arsenide; Field-effect transistors; Semiconductor devices and materials
Rights: Copyright status unknown
RMID: 0030007092
DOI: 10.1049/el:19911180
Appears in Collections:Electrical and Electronic Engineering publications

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