Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/85259
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dc.contributor.authorAbbott, D.en
dc.contributor.authorCui, S.en
dc.contributor.authorEshraghian, K.en
dc.contributor.authorMcCabe, E.en
dc.date.issued1991en
dc.identifier.citationElectronics Letters, 1991; 27(21):1900-1902en
dc.identifier.issn0013-5194en
dc.identifier.urihttp://hdl.handle.net/2440/85259-
dc.description.abstractA new effect in planar GaAs MESFETs, whereby a sharp increase in optical gain at the transistor edges occurs, is reported for the first time. This gain effect only appears when a large resistor is inserted in series with the gate, to produce the conditions for photovoltaic gate biasing. The mechanism for increased gain at the edges is suggested to be due to carrier photogeneration in the substrate that is subsequently collected by the gate. Application in the area of X-Y addressable transistor array imagers is proposed.en
dc.description.statementofresponsibilityD. Abbott, S. Cui, K. Eshraghian, E. McCabeen
dc.language.isoenen
dc.publisherIEEEen
dc.rightsCopyright status unknownen
dc.subjectGallium arsenide; Field-effect transistors; Semiconductor devices and materialsen
dc.titlePhotovoltaic gate biasing edge effect in GaAs MESFETsen
dc.typeJournal articleen
dc.identifier.rmid0030007092en
dc.identifier.doi10.1049/el:19911180en
dc.identifier.pubid74227-
pubs.library.collectionElectrical and Electronic Engineering publicationsen
pubs.library.teamDS02en
pubs.verification-statusVerifieden
pubs.publication-statusPublisheden
Appears in Collections:Electrical and Electronic Engineering publications

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