Ni3N/Ni composites with in-situ growth heterogeneous interfaces as microwave absorbing materials
Date
2015
Authors
Gong, C.
Jia, Y.
Zhao, X.
Liu, H.
Lv, X.
Yu, L.
Zhang, J.
Zhou, J.
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Applied Physics Letters, 2015; 107(153905 (2015)):1-4
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Abstract
We herein report the electromagnetic and microwave absorption properties of Ni3N and Ni3N/Ni composites. The Ni3N/Ni composites with controlled compositions were synthesized by an in-situ thermal decomposition of Ni3N at various calcination temperatures. The mostly optimized Ni3N/Ni composite presents enhanced microwave absorption performances than single phase Ni and Ni3N particles, which is attributed to a proper ratio between Ni and Ni3N components. Such heterogeneous components not only improve the dielectric loss capacity by metal/semiconductor interfaces but can also constitute a significant balance between magnetic losses and dielectric losses, so called the electromagnetic impedance match. This study thus provides a vision to metal/semiconductor materials with in-situ growth interfaces as a potential family of microwave absorbing materials.
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Copyright AIP Publishing LLC