Dopant metrology in advanced FinFETs
Date
2013
Authors
Lansbergen, G.
Rahman, R.
Tettamanzi, G.
Verduijn, J.
Hollenberg, L.
Klimeck, G.
Rogge, S.
Editors
Collaert, N.
Advisors
Journal Title
Journal ISSN
Volume Title
Type:
Book chapter
Citation
CMOS Nanoelectronics: Innovative Devices, Architectures and Applications, 2013 / Collaert, N. (ed./s), Ch.11, pp.399-412
Statement of Responsibility
G. P. Lansbergen, R. Rahman, G.C. Tettamanzi, J. Verduijn, L. C. L. Hollenberg, G. Klimeck, and S. Rogge
Conference Name
Abstract
Ultra-scaled FinFET transistors bear unique fingerprint-like device- to-device differences attributed to random single impurities. This chapter describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity’s chemical species and determine their concentration, local electric field and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.
School/Discipline
Dissertation Note
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Rights
© 2013 Pan Stanford Publishing Pte. Ltd.