High-Gain, Low-Profile, Integrable Planar Lens Antenna at 275 GHz
Date
2024
Authors
Li, M.S.
Ako, R.T.
Sriram, S.
Fumeaux, C.
Withayachumnankul, W.
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Conference paper
Citation
Proceedings of the IEEE 11th Asia-Pacific Conference on Antennas and Propagation (APCAP 2023), 2024, pp.1-2
Statement of Responsibility
Mingxiang Stephen Li, Rajour Tanyi Ako, Sharath Sriram, Christophe Fumeaux, and Withawat Withayachumnankul
Conference Name
IEEE 11th Asia-Pacific Conference on Antennas and Propagation (APCAP) (19 Nov 2023 - 23 Nov 2023 : Guangzhou, China)
Abstract
Terahertz communications require compact, high-gain antennas that can be integrated with sources, as alternative to traditional lenses, which have bulky sizes and lack design flexibility. This paper introduces a high-gain, low-profile silicon cavity antenna integrated with a WR-3 waveguide feed. The antenna consists of a 2-mm thick silicon wafer with non-uniform hole arrays designed to locally control the effective permittivity. The holes are laser-etched on both sides of the silicon wafer, to overcome phase coverage limitations caused by the tapered side walls of the air hole during fabrication. Experimental results confirm a gain of 19 dBi at 275 GHz, with a 3-dB bandwidth of approximately 29%. We further demonstrate that the high-gain antenna can be integrated with a quarter-wave plate for circularly polarized (CP) radiation.
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©2023 IEEE