McGeever, Michael K.2006-12-282006-12-2819951995http://hdl.handle.net/2440/19075Bibliography: leaves 156-165.xvi, 174 leaves : ill. ; 30 cm.This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical.293170 bytesapplication/pdfenRandom access memory.Semiconductor storage devices Design and construction.Gallium arsenide semiconductors.Asynchronous transfer mode.Semiconductor switches.Thesis