Bunder, J.Hill, J.2011-06-022011-06-022009Physical Review B: Condensed Matter and Materials Physics, 2009; 79(23):online-1098-01211550-235Xhttp://hdl.handle.net/2440/64164We analyze the band structure of a silicon nanotube with sp³ bonds and variable bond lengths. This nanotube has many similarities with a carbon nanotube including a band gap at half-filling and conducting behavior which is dependent on structure. We derive a simple formula which predicts when the nanotube is metallic. We discuss our results in the context of a nanotube subject to small applied strains as this provides a means of distorting bond lengths in a predictable way and may be tested experimentally. The effects of strain on nanotube conductance have important implications for sensor technology.en© 2009 The American Physical SocietyElectronic properties of silicon nanotubes with distinct bond lengthsJournal article002010707910.1103/PhysRevB.79.2334010002676995000192-s2.0-7795568427330387Bunder, J. [0000-0001-5355-2288]