Lansbergen, G.Rahman, R.Tettamanzi, G.Verduijn, J.Hollenberg, L.Klimeck, G.Rogge, S.Collaert, N.2018-06-082018-06-082013CMOS Nanoelectronics: Innovative Devices, Architectures and Applications, 2013 / Collaert, N. (ed./s), Ch.11, pp.399-41298143640299789814364027http://hdl.handle.net/2440/112757Ultra-scaled FinFET transistors bear unique fingerprint-like device- to-device differences attributed to random single impurities. This chapter describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity’s chemical species and determine their concentration, local electric field and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.en© 2013 Pan Stanford Publishing Pte. Ltd.cond-mat.mes-hallBook chapter003006462110.1201/b13063-162-s2.0-84881814640286676Tettamanzi, G. [0000-0002-3209-0632]