Lancaster, D.G.Khurmi, C.Bourbeau Hebert, N.Genest, J.Chen, G.Zhang, W.Afshar, S.Monro, T.M.Clarkson, W.A.Shori, R.K.2020-02-252020-02-252017Proceedings of SPIE, 2017 / Clarkson, W.A., Shori, R.K. (ed./s), vol.10082, pp.100821A-1-100821A-897815106060500277-786X1996-756Xhttp://hdl.handle.net/2440/123471Paper presented at: Solid State Lasers XXVI: Technology and DevicesPassively mode-locked sub 200 fs pulses are generated from Er-Yb co-doped ZBLAN waveguide laser using a semiconductor saturable absorber mirror repetition rates of up to 533 MHz. At 156 MHz and 1556 nm central wavelength, the chip laser operates with a broad 25 nm bandwidth. The waveguides were written in the Er-Yb co-doped ZBLAN glass by using ultrafast laser inscription.en© 2017 SPIEConference paper100001357810.1117/12.22557080004024273000382-s2.0-85019458948355502Bourbeau Hebert, N. [0000-0002-6168-8510]