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|Title:||Dopant metrology in advanced FinFETs|
|Citation:||CMOS Nanoelectronics: Innovative Devices, Architectures and Applications, 2013 / Collaert, N. (ed./s), Ch.11, pp.399-412|
|Publisher:||Pan Stanford Publishing|
|G. P. Lansbergen, R. Rahman, G.C. Tettamanzi, J. Verduijn, L. C. L. Hollenberg, G. Klimeck, and S. Rogge|
|Abstract:||Ultra-scaled FinFET transistors bear unique ﬁngerprint-like device- to-device diﬀerences attributed to random single impurities. This chapter describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity’s chemical species and determine their concentration, local electric ﬁeld and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.|
|Rights:||© 2013 Pan Stanford Publishing Pte. Ltd.|
|Appears in Collections:||Physics publications|
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