Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/112757
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Type: Journal article
Title: Dopant metrology in advanced FinFETs
Author: Lansbergen, G.P.
Rahman, R.
Tettamanzi, G.C.
Verduijn, J.
Hollenberg, L.C.L.
Klimeck, G.
Rogge, S.
Citation: arXiv:1111.4238, 2011
Publisher: Pan Stanford Publishing
Publisher Place: Singapore
Issue Date: 2011
ISBN: 9814364029
9789814364027
Statement of
Responsibility: 
G. P. Lansbergen, R. Rahman, G.C. Tettamanzi, J. Verduijn, L. C. L. Hollenberg, G. Klimeck, and S. Rogge
Abstract: Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.
Keywords: cond-mat.mes-hall
Rights: © 2013 Pan Stanford Publishing Pte. Ltd.
DOI: 10.1201/b13063-16
Published version: https://www.taylorfrancis.com/books/e/9789814364034
Appears in Collections:Aurora harvest 3
Physics publications

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