Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/112757
Citations
Scopus Web of Science® Altmetric
?
?
Type: Book chapter
Title: Dopant metrology in advanced FinFETs
Author: Lansbergen, G.
Rahman, R.
Tettamanzi, G.
Verduijn, J.
Hollenberg, L.
Klimeck, G.
Rogge, S.
Citation: CMOS Nanoelectronics: Innovative Devices, Architectures and Applications, 2013 / Collaert, N. (ed./s), Ch.11, pp.399-412
Publisher: Pan Stanford Publishing
Publisher Place: Singapore
Issue Date: 2013
ISBN: 9814364029
9789814364027
Statement of
Responsibility: 
G. P. Lansbergen, R. Rahman, G.C. Tettamanzi, J. Verduijn, L. C. L. Hollenberg, G. Klimeck, and S. Rogge
Abstract: Ultra-scaled FinFET transistors bear unique fingerprint-like device- to-device differences attributed to random single impurities. This chapter describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity’s chemical species and determine their concentration, local electric field and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.
Rights: © 2013 Pan Stanford Publishing Pte. Ltd.
RMID: 0030064621
DOI: 10.1201/b13063-16
Published version: https://www.taylorfrancis.com/books/e/9789814364034
Appears in Collections:Physics publications

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.