Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/112641
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Type: Conference paper
Title: A fully integrable hybrid power management unit for passive UHF RFID
Author: Sun, M.
Al-Sarawi, S.
Ashenden, P.
Cavaiuolo, M.
Ranasinghe, D.
Citation: Proceedings of the 11th Annual IEEE International Conference on RFID (RFID 2017), 2017 / pp.198-204
Publisher: IEEE
Publisher Place: Online
Issue Date: 2017
Series/Report no.: IEEE International Conference on RFID
ISBN: 1509045775
9781509045778
ISSN: 2374-0221
Conference Name: 11th Annual IEEE International Conference on RFID (RFID 2017) (09 May 2017 - 11 May 2017 : Phoenix, AZ)
Statement of
Responsibility: 
Menghan Sun, Said F. Al-Sarawi, Peter Ashenden, Mario Cavaiuolo and Damith C. Ranasinghe
Abstract: This paper presents a fully integrable hybrid power management unit (HPMU) realized in the 130 nm generic CMOS (complementary metal-oxide-semiconductor) process from GlobalFoundries to increase the performance of RFID tags—especially those with passively powered sensors—by intelligently managing harvested power. The HPMU strategically takes advantage of the excess harvested power beyond the operational requirements of a tag and stores this energy externally. Through intelligent power routing, this stored energy is used to sustain the supply voltage of tag circuitry during brownouts, cold starts, and for reading ranges where harvested power is inadequate to power tag logic circuits but the tag distance to an interrogating antenna is close enough to expect a backscattered response to be received by an RFID reader. This approach can reduce cold start-up time, mitigate consequences of brownouts and, effectively, extend the operational range and the responsiveness of tags—especially those with passively powered sensors. In addition, the HPMU switches off when the harvested power, indicative of a weak interrogating signal, is too low to conserve stored power. The entire HPMU has been optimized for low power consumption, which not only reduces the power overhead that HPMU introduces but also ensures that as much power as possible is siphoned and stored rather than dissipated in the power management circuitry. In off state, the HPMU consumes only around 10 nA from the external storage element and during charge storage mode of operation, the HPMU has a peak conversion efficiency of approximately 65%.
Rights: ©2017 IEEE
RMID: 0030073396
DOI: 10.1109/RFID.2017.7945609
Published version: https://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=7939004
Appears in Collections:Electrical and Electronic Engineering publications

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