Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/2457
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dc.contributor.authorXu, J.-
dc.contributor.authorAbbott, D.-
dc.contributor.authorDai, Y.-
dc.date.issued2000-
dc.identifier.citationMicroelectronics Reliability, 2000; 40(1):171-178-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/2440/2457-
dc.description.abstractIn this paper the theoretical analysis of noise sources in Optoelectronic Coupled Devices (OCDs) is given and the relation between typical defects and 1/f, g–r and burst noise is described. According to statistical and experimental results, a threshold to screen potential devices with excess noise is derived, which has been proved theoretically that the screening criterion is reasonable. Moreover, the experimental results show that the method is of practical value.-
dc.language.isoen-
dc.publisherPergamon-Elsevier Science Ltd-
dc.source.urihttp://dx.doi.org/10.1016/s0026-2714(99)00221-8-
dc.title1/f, g-r and burst noise used as a screening threshold for reliability estimation of optoelectronic coupled devices-
dc.typeJournal article-
dc.identifier.doi10.1016/S0026-2714(99)00221-8-
pubs.publication-statusPublished-
dc.identifier.orcidAbbott, D. [0000-0002-0945-2674]-
Appears in Collections:Aurora harvest 2
Electrical and Electronic Engineering publications

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