Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/69833
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dc.contributor.authorEshraghian, K.en
dc.contributor.authorCho, K.R.en
dc.contributor.authorKavehei, O.en
dc.contributor.authorKang, S.en
dc.contributor.authorAbbott, D.en
dc.contributor.authorKang, S.M.en
dc.date.issued2011en
dc.identifier.citationIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2011; 19(8):1407-1417en
dc.identifier.issn1063-8210en
dc.identifier.issn1557-9999en
dc.identifier.urihttp://hdl.handle.net/2440/69833-
dc.description.abstractLarge-capacity content addressable memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of disparate technologies, which are compatible with CMOS processing, may allow extension of Moore's Law for a few more years. This paper provides a new approach towards the design and modeling of Memory resistor (Memristor)-based CAM (MCAM) using a combination of memristor MOS devices to form the core of a memory/compare logic cell that forms the building block of the CAM architecture. The non-volatile characteristic and the nanoscale geometry together with compatibility of the memristor with CMOS processing technology increases the packing density, provides for new approaches towards power management through disabling CAM blocks without loss of stored data, reduces power dissipation, and has scope for speed improvement as the technology matures.en
dc.description.statementofresponsibilityKamran Eshraghian, Kyoung-Rok Cho, Omid Kavehei, Soon-Ku Kang, Derek Abbott and Sung-Mo Steve Kangen
dc.language.isoenen
dc.publisherIEEE-Inst Electrical Electronics Engineers Incen
dc.rights© 2010 IEEEen
dc.subjectContent addressable memory (CAM); memory; memory resistor-based CAM (MCAM); memory resistor (memristor)-MOS hybrid architecture; modeling.en
dc.titleMemristor MOS Content Addressable Memory (MCAM): Hybrid architecture for future high performance search enginesen
dc.typeJournal articleen
dc.identifier.rmid0020112389en
dc.identifier.doi10.1109/TVLSI.2010.2049867en
dc.identifier.pubid27938-
pubs.library.collectionElectrical and Electronic Engineering publicationsen
pubs.verification-statusVerifieden
pubs.publication-statusPublisheden
dc.identifier.orcidAbbott, D. [0000-0002-0945-2674]en
Appears in Collections:Electrical and Electronic Engineering publications

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