Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/72449
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Type: Journal article
Title: Memristive device fundamentals and modeling: applications to circuits and systems simulation
Author: Eshraghian, K.
Kavehei, O.
Cho, K.R.
Chappell, J.
Iqbal, A.
Al-Sarawi, S.
Abbott, D.
Citation: Proceedings of the IEEE, 2012; 100(6):1991-2007
Publisher: IEEE-Inst Electrical Electronics Engineers Inc
Issue Date: 2012
ISSN: 0018-9219
1558-2256
Statement of
Responsibility: 
Kamran Eshraghian, Omid Kavehei, Kyoung-Rok Cho, James M. Chappell, Azhar Iqbal, Said F. Al-Sarawi and Derek Abbott
Abstract: The nonvolatile memory property of a memristor enables the realization of new methods for a variety of computational engines ranging from innovative memristive-based neuromorphic circuitry through to advanced memory applications. The nanometer-scale feature of the device creates a new opportunity for realization of innovative circuits that in some cases are not possible or have inefficient realization in the present and established design domain. The nature of the boundary, the complexity of the ionic transport and tunneling mechanism, and the nanoscale feature of the memristor introduces challenges in modeling, characterization, and simulation of future circuits and systems. Here, a deeper insight is gained in understanding the device operation, leading to the development of practical models that can be implemented in current computer-aided design (CAD) tools.
Keywords: Conductance modulation index; content addressablememory (CAM); memory; memristor; memristor-basedcontent addressable memory (MCAM); SPICE modeling
Rights: © Copyright 2012 IEEE
RMID: 0020119449
DOI: 10.1109/JPROC.2012.2188770
Appears in Collections:Electrical and Electronic Engineering publications

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