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dc.contributor.authorAl-Sarawi, S.-
dc.contributor.authorFisher., P.-
dc.identifier.citation2015 International Conference on Information and Communication Technology Research (ICTRC), 2015, pp.278-281-
dc.description.abstractSeveral well-known simple behavioral models for solid state power amplifier (SSPA) devices are reviewed and compared. This paper proposes an improvement to White et al's model and discusses their use of the Rapp model for AM/AM and AM/PM device modeling. Furthermore an improvement to Honkanen & Haggman's phase shift addition to Rapp's model is given thus allowing phase shifts greater than zero degrees to be considered. Finally a review of several models' performances beyond available data and into the saturation region is presented. These simple model improvements and additions, combined with the extension of the modeling into the saturation region, thus allow for faster and more accurate system level analysis, enabling better crucial output device selections to be made.-
dc.description.statementofresponsibilityPaul O. Fisher and Said F. Al-Sarawi-
dc.rights©2015 IEEE-
dc.subjectBehavioral models; SSPAs; White Model; Rapp Model-
dc.titleImproving the accuracy of SSPA device behavioral modeling-
dc.typeConference paper-
dc.contributor.conferenceInternational Conference on Information and Communication Technology Research (ICTRC) (17 May 2015 - 19 May 2015 : Abu Dhabi, United Arab Emirates)-
dc.identifier.orcidAl-Sarawi, S. [0000-0002-3242-8197]-
Appears in Collections:Aurora harvest 7
Electrical and Electronic Engineering publications

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