Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch / Michael K. McGeever.
Date
1995
Authors
McGeever, Michael K.
Editors
Advisors
Journal Title
Journal ISSN
Volume Title
Type:
Thesis
Citation
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Abstract
This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical.
School/Discipline
Dept. of Electrical and Electronic Engineering
Dissertation Note
Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical & Electronic Engineering, 1996?
Provenance
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Description
Bibliography: leaves 156-165.
xvi, 174 leaves : ill. ; 30 cm.
xvi, 174 leaves : ill. ; 30 cm.