An accurate single-electron pump based on a highly tunable silicon quantum dot
Date
2014
Authors
Rossi, A.
Tanttu, T.
Tan, K.
Iisakka, I.
Zhao, R.
Chan, K.
Tettamanzi, G.
Rogge, S.
Dzurak, A.
Möttönen, M.
Editors
Advisors
Journal Title
Journal ISSN
Volume Title
Type:
Journal article
Citation
Nano Letters, 2014; 14(6):3405-3411
Statement of Responsibility
Alessandro Rossi, Tuomo Tanttu, Kuan Yen Tan, Ilkka Iisakka, Ruichen Zhao, Kok Wai Chan, Giuseppe C. Tettamanzi, Sven Rogge, Andrew S. Dzurak, and Mikko Möttönen
Conference Name
Abstract
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of nonadiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.
School/Discipline
Dissertation Note
Provenance
Description
Access Status
Rights
© 2014 American Chemical Society