Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
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Date
2023
Authors
Vilasam, A.G.S.
Adhikari, S.
Gupta, B.
Balendhran, S.
Higashitarumizu, N.
Tournet, J.
Li, L.
Javey, A.
Crozier, K.B.
Karuturi, S.
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Nanotechnology, 2023; 34(49):495601-1-495601-11
Statement of Responsibility
Aswani Gopakumar Saraswathy Vilasam, Sonachand Adhikari, Bikesh Gupta, Sivacarendran Balendhran, Naoki Higashitarumizu, Julie Tournet, Lily Li, Ali Javey, Kenneth B Crozier, Siva Karuturi, Chennupati Jagadish, and Hark Hoe Tan
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Abstract
Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1×109cm-2is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm-2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.
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© 2023 The Author(s). Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.