Insulator-metal transition in substrate-independent VO₂ thin film for phase-change devices

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dc.contributor.authorTaha, M.
dc.contributor.authorWalia, S.
dc.contributor.authorAhmed, T.
dc.contributor.authorHeadland, D.
dc.contributor.authorWithayachumnankul, W.
dc.contributor.authorSriram, S.
dc.contributor.authorBhaskaran, M.
dc.date.issued2017
dc.description.abstractVanadium has 11 oxide phases, with the binary VO2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO2 synthesis have also been standing issues in VO2 fabrication. Here, we address these major challenges in harnessing the functionality in VO2 by demonstrating an approach that enables crystalline, switchable VO2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO2 on any substrate, thereby exploiting its untapped potential.
dc.description.statementofresponsibilityMohammad Taha, Sumeet Walia, Taimur Ahmed, Daniel Headland, Withawat Withayachumnankul, Sharath Sriram and Madhu Bhaskaran
dc.identifier.citationScientific Reports, 2017; 7(1):17899-1-17899-10
dc.identifier.doi10.1038/s41598-017-17937-3
dc.identifier.issn2045-2322
dc.identifier.issn2045-2322
dc.identifier.orcidHeadland, D. [0000-0003-1527-180X]
dc.identifier.orcidWithayachumnankul, W. [0000-0003-1155-567X]
dc.identifier.urihttp://hdl.handle.net/2440/111059
dc.language.isoen
dc.publisherNature Publishing Group
dc.relation.granthttp://purl.org/au-research/grants/arc/DE160100023
dc.relation.granthttp://purl.org/au-research/grants/arc/DP170101922
dc.relation.granthttp://purl.org/au-research/grants/arc/DP130100062
dc.relation.granthttp://purl.org/au-research/grants/arc/LE0882246
dc.relation.granthttp://purl.org/au-research/grants/arc/LE0989615
dc.relation.granthttp://purl.org/au-research/grants/arc/LE110100223
dc.relation.granthttp://purl.org/au-research/grants/arc/LE150100001
dc.rights© The Author(s) 2017. Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
dc.source.urihttps://doi.org/10.1038/s41598-017-17937-3
dc.titleInsulator-metal transition in substrate-independent VO₂ thin film for phase-change devices
dc.title.alternativeInsulator-metal transition in substrate-independent VO(2) thin film for phase-change devices
dc.typeJournal article
pubs.publication-statusPublished

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