Electronic properties of silicon nanotubes with distinct bond lengths

Simple item page
dc.contributor.authorBunder, J.
dc.contributor.authorHill, J.
dc.date.issued2009
dc.description.abstractWe analyze the band structure of a silicon nanotube with sp³ bonds and variable bond lengths. This nanotube has many similarities with a carbon nanotube including a band gap at half-filling and conducting behavior which is dependent on structure. We derive a simple formula which predicts when the nanotube is metallic. We discuss our results in the context of a nanotube subject to small applied strains as this provides a means of distorting bond lengths in a predictable way and may be tested experimentally. The effects of strain on nanotube conductance have important implications for sensor technology.
dc.description.statementofresponsibilityJ. E. Bunder and James M. Hill
dc.identifier.citationPhysical Review B: Condensed Matter and Materials Physics, 2009; 79(23):online-
dc.identifier.doi10.1103/PhysRevB.79.233401
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.orcidBunder, J. [0000-0001-5355-2288]
dc.identifier.urihttp://hdl.handle.net/2440/64164
dc.language.isoen
dc.publisherAmerican Physical Soc
dc.relation.grantARC
dc.rights© 2009 The American Physical Society
dc.source.urihttps://doi.org/10.1103/physrevb.79.233401
dc.titleElectronic properties of silicon nanotubes with distinct bond lengths
dc.typeJournal article
pubs.publication-statusPublished

Files

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
hdl_64164.pdf
Size:
438.45 KB
Format:
Adobe Portable Document Format
Description:
Published version
Download

Collections

Mathematical Sciences publications