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Redox-active monolayers in mesoporous silicon

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dc.contributor.authorCiampi, S.
dc.contributor.authorGuan, B.
dc.contributor.authorDarwish, N.
dc.contributor.authorReece, P.J.
dc.contributor.authorGooding, J.J.
dc.date.issued2012
dc.descriptionData source: supporting information, https://doi.org/10.1021/jp303980x
dc.description.abstractHerein, redox reactions at chemically derivatized porous silicon (PSi) films are investigated. Passivation of the PSi matrix, by replacing metastable Si-H termini with nonpolar Si-C=C-R linkages, allows the electrochemical PSi device to operate in aqueous environments under oxidizing conditions (i.e., electron hole accumulation regime). Cu(I)-catalyzed alkyne-azide cycloaddition reactions are used to anchor ferrocene derivatives and probe electrochemical reactions at the exceedingly large surface area-to-volume ratio of mesoporous PSi. The forward-biased p-type PSi/electrolyte interface retains a quasi-metallic behavior throughout its entire contour, and it does so for prolonged times even when the electrode is poised at potentials at which a bare silicon electrode would rapidly oxidize. The interfacial capacitance of the PSi matrix is, however, unexpectedly low. An explanation is proposed where PSi morphology and the semiconductor space-charge layer capacitance play a significant role in determining the charging properties of the electrode. These results are important for the application of porous semiconductor electrodes in sensing, electrocatalytic, and energy-conversion devices.
dc.identifier.citationJournal of Physical Chemistry C, 2012; 116(30):16080-16088
dc.identifier.doi10.1021/jp303980x
dc.identifier.issn1932-7447
dc.identifier.issn1932-7455
dc.identifier.orcidGuan, B. [0000-0003-1247-6914]
dc.identifier.urihttps://hdl.handle.net/11541.2/119697
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.relation.fundingARC DP1094564
dc.relation.fundingAustralian Government
dc.relation.fundingAustralian Institute of Nuclear Science and Engineering (AINSE)
dc.rightsCopyright 2012 American Chemical Society
dc.source.urihttps://doi.org/10.1021/jp303980x
dc.subjectmesoporous silicon
dc.subjectredox reactions
dc.subjectredox
dc.subjectoxidizing conditions
dc.titleRedox-active monolayers in mesoporous silicon
dc.typeJournal article
pubs.publication-statusPublished
ror.mmsid9915989380501831

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