Photovoltaic gate biasing edge effect in GaAs MESFETs

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dc.contributor.authorAbbott, D.
dc.contributor.authorCui, S.
dc.contributor.authorEshraghian, K.
dc.contributor.authorMcCabe, E.
dc.date.issued1991
dc.description.abstractA new effect in planar GaAs MESFETs, whereby a sharp increase in optical gain at the transistor edges occurs, is reported for the first time. This gain effect only appears when a large resistor is inserted in series with the gate, to produce the conditions for photovoltaic gate biasing. The mechanism for increased gain at the edges is suggested to be due to carrier photogeneration in the substrate that is subsequently collected by the gate. Application in the area of X-Y addressable transistor array imagers is proposed.
dc.description.statementofresponsibilityD. Abbott, S. Cui, K. Eshraghian, E. McCabe
dc.identifier.citationElectronics Letters, 1991; 27(21):1900-1902
dc.identifier.doi10.1049/el:19911180
dc.identifier.issn0013-5194
dc.identifier.issn1350-911X
dc.identifier.orcidAbbott, D. [0000-0002-0945-2674]
dc.identifier.urihttp://hdl.handle.net/2440/85259
dc.language.isoen
dc.publisherIEEE
dc.rightsCopyright status unknown
dc.source.urihttps://doi.org/10.1049/el:19911180
dc.subjectGallium arsenide; Field-effect transistors; Semiconductor devices and materials
dc.titlePhotovoltaic gate biasing edge effect in GaAs MESFETs
dc.typeJournal article
pubs.publication-statusPublished

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