Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Date
2013
Authors
Chen, B.
Wang, J.
Gao, Q.
Chen, Y.
Liao, X.
Lu, C.
Tan, H.H.
Mai, Y.W.
Zou, J.
Ringer, S.P.
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Journal article
Citation
Nano Letters, 2013; 13(9):4369-4373
Statement of Responsibility
Bin Chen, Jun Wang, Qiang Gao, Yujie Chen, Xiaozhou Liao, Chunsheng Lu, Hark Hoe Tan, Yiu-Wing Mai, Jin Zou, Simon P. Ringer, Huajian Gao, and Chennupati Jagadish
Conference Name
Abstract
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.
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© 2013 American Chemical Society