Design parameters for a two-state nanomemory device
Date
2012
Authors
Lee, R.
Hill, J.
Editors
Ruck, B.J.
Kemmitt, T.
Kemmitt, T.
Advisors
Journal Title
Journal ISSN
Volume Title
Type:
Conference paper
Citation
Materials Science Forum, 2012 / Ruck, B.J., Kemmitt, T. (ed./s), vol.700, pp.85-88
Statement of Responsibility
Conference Name
Conference on Advanced Materials and Nanotechnology (7 Feb 2011 - 11 Feb 2011 : Wellington)
Abstract
In this study, we investigate the internal mechanics for a two-state memory device, comprising a charged metallofullerene which is located inside a closed carbon nanotube. Assuming the Lennard-Jones interaction energy and the continuum approximation, the metallofullerene has two symmetrically placed equal minimum energy positions. On one side the encapsulated metallofullerene represents the zero information state and by applying an external electrical field, the metallofullerene can be made to overcome the energy barrier of the nanotube, and pass from one end of the tube to the other, where the metallofullerene then represents the one information state.