Mode-locked sub 200 fs laser pulses from an Er-Yb-Ce ZBLAN waveguide laser

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dc.contributor.authorLancaster, D.G.
dc.contributor.authorKhurmi, C.
dc.contributor.authorBourbeau Hebert, N.
dc.contributor.authorGenest, J.
dc.contributor.authorChen, G.
dc.contributor.authorZhang, W.
dc.contributor.authorAfshar, S.
dc.contributor.authorMonro, T.M.
dc.contributor.conferenceSolid State Lasers (30 Jan 2017 - 2 Feb 2017 : San Francisco, USA)
dc.contributor.editorClarkson, W.A.
dc.contributor.editorShori, R.K.
dc.date.issued2017
dc.descriptionPaper presented at: Solid State Lasers XXVI: Technology and Devices
dc.description.abstractPassively mode-locked sub 200 fs pulses are generated from Er-Yb co-doped ZBLAN waveguide laser using a semiconductor saturable absorber mirror repetition rates of up to 533 MHz. At 156 MHz and 1556 nm central wavelength, the chip laser operates with a broad 25 nm bandwidth. The waveguides were written in the Er-Yb co-doped ZBLAN glass by using ultrafast laser inscription.
dc.description.statementofresponsibilityDavid G. Lancaster, Champak Khurmi, Nicolas Bourbeau-Hebert, Jerome Genest, George Chen, Wenqi Zhang, Shahraam Afshar, Tanya M. Monro,
dc.identifier.citationProceedings of SPIE, 2017 / Clarkson, W.A., Shori, R.K. (ed./s), vol.10082, pp.100821A-1-100821A-8
dc.identifier.doi10.1117/12.2255708
dc.identifier.isbn9781510606050
dc.identifier.issn0277-786X
dc.identifier.issn1996-756X
dc.identifier.orcidBourbeau Hebert, N. [0000-0002-6168-8510]
dc.identifier.urihttp://hdl.handle.net/2440/123471
dc.language.isoen
dc.publisherSPIE
dc.publisher.placeonline
dc.relation.granthttp://purl.org/au-research/grants/arc/LP130101133
dc.relation.ispartofseriesProceedings of SPIE
dc.rights© 2017 SPIE
dc.source.urihttps://doi.org/10.1117/12.2255708
dc.titleMode-locked sub 200 fs laser pulses from an Er-Yb-Ce ZBLAN waveguide laser
dc.typeConference paper
pubs.publication-statusPublished

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