Probing the spin states of a single acceptor atom
Date
2014
Authors
Van Der Heijden, J.
Salfi, J.
Mol, J.
Verduijn, J.
Tettamanzi, G.
Hamilton, A.
Collaert, N.
Rogge, S.
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Journal article
Citation
Nano Letters, 2014; 14(3):1492-1496
Statement of Responsibility
Joost van der Heijden, Joe Salfi, Jan A. Mol, Jan Verduijn, Giuseppe C. Tettamanzi, Alex R. Hamilton, Nadine Collaert, and Sven Rogge
Conference Name
Abstract
We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a function of magnetic field into four states, which is unique for a single hole bound to an acceptor in a bulk semiconductor. The two lowest spin states are heavy (|m(j)| = 3/2) and light (|m(j)| = 1/2) hole-like, a two-level system that can be electrically driven and is characterized by a magnetic field dependent and long relaxation time, which are properties of interest for qubits. Although the bulklike spin splitting of a boron atom is preserved in our nanotransistor, the measured Landé g-factors, |g(hh)| = 0.81 ± 0.06 and |g(lh)| = 0.85 ± 0.21 for heavy and light holes respectively, are lower than the bulk value.
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© 2014 American Chemical Society