Probing the spin states of a single acceptor atom
dc.contributor.author | Van Der Heijden, J. | |
dc.contributor.author | Salfi, J. | |
dc.contributor.author | Mol, J. | |
dc.contributor.author | Verduijn, J. | |
dc.contributor.author | Tettamanzi, G. | |
dc.contributor.author | Hamilton, A. | |
dc.contributor.author | Collaert, N. | |
dc.contributor.author | Rogge, S. | |
dc.date.issued | 2014 | |
dc.description.abstract | We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a function of magnetic field into four states, which is unique for a single hole bound to an acceptor in a bulk semiconductor. The two lowest spin states are heavy (|m(j)| = 3/2) and light (|m(j)| = 1/2) hole-like, a two-level system that can be electrically driven and is characterized by a magnetic field dependent and long relaxation time, which are properties of interest for qubits. Although the bulklike spin splitting of a boron atom is preserved in our nanotransistor, the measured Landé g-factors, |g(hh)| = 0.81 ± 0.06 and |g(lh)| = 0.85 ± 0.21 for heavy and light holes respectively, are lower than the bulk value. | |
dc.description.statementofresponsibility | Joost van der Heijden, Joe Salfi, Jan A. Mol, Jan Verduijn, Giuseppe C. Tettamanzi, Alex R. Hamilton, Nadine Collaert, and Sven Rogge | |
dc.identifier.citation | Nano Letters, 2014; 14(3):1492-1496 | |
dc.identifier.doi | 10.1021/nl4047015 | |
dc.identifier.issn | 1530-6984 | |
dc.identifier.issn | 1530-6992 | |
dc.identifier.orcid | Tettamanzi, G. [0000-0002-3209-0632] | |
dc.identifier.uri | http://hdl.handle.net/2440/104343 | |
dc.language.iso | en | |
dc.publisher | American Chemical Society | |
dc.relation.grant | http://purl.org/au-research/grants/arc/FT100100589 | |
dc.relation.grant | http://purl.org/au-research/grants/arc/DP120101825 | |
dc.relation.grant | http://purl.org/au-research/grants/arc/DE120100702 | |
dc.rights | © 2014 American Chemical Society | |
dc.source.uri | https://doi.org/10.1021/nl4047015 | |
dc.subject | Single acceptor; silicon MOSFET; single atom transistor; boron atom; magneto-transport spectroscopy; hole spin states | |
dc.title | Probing the spin states of a single acceptor atom | |
dc.type | Journal article | |
pubs.publication-status | Published |