Defect formation in InGaAs/AlSb/InAs memory devices

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dc.contributor.authorTrevisan, A.
dc.contributor.authorHodgson, P.D.
dc.contributor.authorLane, D.
dc.contributor.authorHayne, M.
dc.contributor.authorKoenraad, P.M.
dc.date.issued2023
dc.description.abstractULTRARAM™ is a novel floating-gate nonvolatile memory in which the oxide barrier of flash is replaced by a triple-barrier resonant tunneling structure comprising of multiple InAs/AlSb heterojunctions. The quality of the triple barrier resonant tunneling heterostructure of an ULTRARAM™ device in terms of interface sharpness and the presence of defects was analyzed by cross-sectional scanning tunneling microscopy. We observed two different types of defects: stacking faults originating in the layers below the triple barrier resonant tunneling structure and AlSb accumulations at the interface between the lower AlSb layer of the triple barrier resonant tunneling structure and the InGaAs channel. The InGaAs surface of a second sample was measured by atomic force microscopy in order to investigate whether its unevenness is caused by deposition of the AlSb layer or it is already present before the AlSb deposition process.
dc.description.statementofresponsibilityAurelia Trevisan, Peter D. Hodgson, Dominic Lane, Manus Hayne, and Paul M. Koenraad
dc.identifier.citationJournal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics, 2023; 41(4):044001-1-044001-7
dc.identifier.doi10.1116/6.0002677
dc.identifier.issn2166-2746
dc.identifier.issn2166-2754
dc.identifier.orcidLane, D. [0000-0001-6647-2869]
dc.identifier.urihttps://hdl.handle.net/2440/141045
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.rights© 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
dc.source.urihttps://doi.org/10.1116/6.0002677
dc.titleDefect formation in InGaAs/AlSb/InAs memory devices
dc.typeJournal article
pubs.publication-statusPublished

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