Electronic Transport in Ultra-Narrow-Bandgap InAs/InGaSb Superlattices on Conductive GaSb Substrates
Date
2025
Authors
Umana-Membreno, G.A.
Kala, H.
Patrashin, M.
Sekine, N.
Akahane, K.
Kasamatsu, A.
Akhavan, N.D.
Antoszewski, J.
Hosako, I.
Faraone, L.
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Journal article
Citation
Journal of Electronic Materials, 2025; 54(10):8286-8293
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G. A. Umana, Membreno, H. Kala, M. Patrashin, N. Sekine, K. Akahane, A. Kasamatsu, N. D. Akhavan, J. Antoszewski, I. Hosako, L. Faraone
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Abstract
The electronic properties of an ultra-narrow-bandgap InAs/InGaSb type II superlattice (T2SL) were investigated for potential terahertz applications using magnetic field-dependent transport measurements and mobility spectrum analysis over a temperature range of 10–300 K. Since the 267.2-nm-thick 40-period T2SL structure was grown on electrically conductive undoped p-type GaSb substrates, detailed transport characterization of all carrier species in representative substrate-only and substrate/buffer reference samples was essential to unambiguously discriminate carriers. The results indicate that a single high-mobility electron species dominates electronic transport in the T2SL structure over the range of 56–300 K. From analysis of the sheet electron density, a temperature-dependent energy bandgap Varshni model was extracted, revealing that the T2SL bandgap can be tuned from 13 meV at 80 K, down to 1.3 meV at 115 K, corresponding to cutoff frequencies in the range of 0.3 to −3.2 THz range. In addition, the results indicate an InAs/GaSb valence band offset (VBO) of 0.605 eV, which is consistent with a T2SL characterized by InSb-like interface bonds.
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© The Author(s) 2025. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.