Broadband terahertz modulation using SiO2/Si gated monolayer graphene
Date
2016
Authors
Liu, X.
Parrott, E.P.J.
Chen, Z.
Ung, B.S.Y.
Xu, J.
Pickwell Macpherson, E.
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Conference paper
Citation
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016, pp.1-3
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2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) (25 Sep 2016 - 30 Sep 2016 : Copenhagen, Denmark)
Abstract
We have experimentally realized a broadband THz modulator in a total internal reflection geometry using SiO2/Si gated monolayer graphene. The modulation depth in our device is up to 83% over the range of 0.2-0.6 THz, and can be further improved by extending the size of our modulator and using multiple reflections.
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Copyright 2016 IEEE