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Broadband terahertz modulation using SiO2/Si gated monolayer graphene

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dc.contributor.authorLiu, X.
dc.contributor.authorParrott, E.P.J.
dc.contributor.authorChen, Z.
dc.contributor.authorUng, B.S.Y.
dc.contributor.authorXu, J.
dc.contributor.authorPickwell Macpherson, E.
dc.contributor.conference2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) (25 Sep 2016 - 30 Sep 2016 : Copenhagen, Denmark)
dc.date.issued2016
dc.description.abstractWe have experimentally realized a broadband THz modulator in a total internal reflection geometry using SiO2/Si gated monolayer graphene. The modulation depth in our device is up to 83% over the range of 0.2-0.6 THz, and can be further improved by extending the size of our modulator and using multiple reflections.
dc.identifier.citation2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016, pp.1-3
dc.identifier.doi10.1109/IRMMW-THz.2016.7758558
dc.identifier.isbn9781467384858
dc.identifier.urihttps://hdl.handle.net/11541.2/138396
dc.language.isoen
dc.publisherIEEE
dc.publisher.placeUS
dc.relation.fundingResearch Grants Council of Hong Kong 14201415
dc.relation.fundingResearch Grants Council of Hong Kong 14205514
dc.rightsCopyright 2016 IEEE
dc.source.urihttps://doi.org/10.1109/IRMMW-THz.2016.7758558
dc.subjectbroadband terahertz
dc.subjectmodulation depth
dc.subjectmultiple reflections
dc.subjectTHz modulators
dc.subjecttotal internal reflection geometries
dc.titleBroadband terahertz modulation using SiO2/Si gated monolayer graphene
dc.typeConference paper
pubs.publication-statusPublished
ror.mmsid9916302506201831

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