Nanoscale heterojunction indium oxide/molybdenum disulphide field-effect transistor: a cost-effective wafer scale fabrication with improved performance
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2025
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Amen, M.T.
Cheah, E.
Tran, D.P.
Thierry, B.
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Sensors and Actuators Reports, 2025; 10(100390):1-8
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Metal oxide heterojunction thin films are promising building blocks for the fabrication of functional devices in microelectronics, bio-chemical sensors, photovoltaics, and optical displays. However, balancing the large-scale manufacturability with performance, uniformity, and cost-effectiveness remains a significant challenge. Here, we report a wafer-scale fabrication process of bilayer stacks of high-mobility indium oxide and molybdenum disulphide heterojunction thin films and their application for the preparation of high-performance field-effect transistors (FETs). The annealed heterojunction thin film exhibits uniform crystalline structures and good surface roughness across the whole wafer. A simple soft lithography and lift-off process of the heterojunction thin film could produce nanotransistor devices with a remarkable electron mobility enhancement of more than 1100 % compared to indium oxide or molybdenum disulphide single layer devices. The heterojunction FET sensors yielded more than a twofold higher pH sensitivity compared to silicon-based ionic FETs and excellent linearity. These findings coupled with the cost-effective fabrication strategy underscore the potential of indium oxide and molybdenum disulphide heterojunction FET devices.
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Copyright 2025 Published by Elsevier B.V. (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Access Condition Notes: This is an open access article under the CC BY-NC-ND license.