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Nanoscale heterojunction indium oxide/molybdenum disulphide field-effect transistor: a cost-effective wafer scale fabrication with improved performance

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dc.contributor.authorAmen, M.T.
dc.contributor.authorCheah, E.
dc.contributor.authorTran, D.P.
dc.contributor.authorThierry, B.
dc.date.issued2025
dc.description.abstractMetal oxide heterojunction thin films are promising building blocks for the fabrication of functional devices in microelectronics, bio-chemical sensors, photovoltaics, and optical displays. However, balancing the large-scale manufacturability with performance, uniformity, and cost-effectiveness remains a significant challenge. Here, we report a wafer-scale fabrication process of bilayer stacks of high-mobility indium oxide and molybdenum disulphide heterojunction thin films and their application for the preparation of high-performance field-effect transistors (FETs). The annealed heterojunction thin film exhibits uniform crystalline structures and good surface roughness across the whole wafer. A simple soft lithography and lift-off process of the heterojunction thin film could produce nanotransistor devices with a remarkable electron mobility enhancement of more than 1100 % compared to indium oxide or molybdenum disulphide single layer devices. The heterojunction FET sensors yielded more than a twofold higher pH sensitivity compared to silicon-based ionic FETs and excellent linearity. These findings coupled with the cost-effective fabrication strategy underscore the potential of indium oxide and molybdenum disulphide heterojunction FET devices.
dc.identifier.citationSensors and Actuators Reports, 2025; 10(100390):1-8
dc.identifier.doi10.1016/j.snr.2025.100390
dc.identifier.issn2666-0539
dc.identifier.issn2666-0539
dc.identifier.urihttps://hdl.handle.net/11541.2/44793
dc.language.isoen
dc.publisherElsevier
dc.relation.fundingHospital Research Foundation 201/71-83100-01
dc.relation.funding1197173 NHMRC
dc.rightsCopyright 2025 Published by Elsevier B.V. (http://creativecommons.org/licenses/by-nc-nd/4.0/) Access Condition Notes: This is an open access article under the CC BY-NC-ND license.
dc.source.urihttps://doi.org/10.1016/j.snr.2025.100390
dc.subjectfet
dc.subjectsputtering
dc.subjecthetrostructure
dc.subjectheterojunction
dc.subjectindium oxide
dc.subjectmolybdenum
dc.subjectph sensor
dc.titleNanoscale heterojunction indium oxide/molybdenum disulphide field-effect transistor: a cost-effective wafer scale fabrication with improved performance
dc.typeJournal article
pubs.publication-statusPublished
ror.fileinfo12308325210001831 13308325200001831 9917079850301831
ror.mmsid9917079850301831

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